MPS2907A
Preferred Device
General Purpose
Transistors
PNP Silicon
http://onsemi.com
COLLECTOR
3
Symbol
VCEO
VCBO
VEBO
IC
PD
625
5.0
PD
1.5
12
TJ, Tstg
–55 to
+150
Watts
mW/°C
°C
1
2
3
mW
mW/°C
TO–92
CASE 29
STYLES 1, 14
Value
–60
–60
–5.0
–600
Unit
Vdc
Vdc
Vdc
mAdc
1
EMITTER
STYLE 1
2
BASE
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
MARKING DIAGRAMS
Unit
°C/W
°C/W
Y
WW
= Year
= Work Week
MPS2
907A
YWW
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
R
θJA
R
θJC
Max
200
83.3
ORDERING INFORMATION
Device
MPS2907A
MPS2907ARLRA
MPS2907ARLRE
MPS2907ARLRM
MPS2907ARLRP
Package
TO–92
TO–92
TO–92
TO–92
TO–92
Shipping
5000 Units/Box
2000/Tape & Reel
2000/Ammo Pack
2000/Ammo Pack
2000/Ammo Pack
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2001
1
October, 2001 – Rev. 0
Publication Order Number:
MPS2907A/D
ONSEMI [ ON SEMICONDUCTOR ]
