MPS2907A Series
General Purpose
Transistors
PNP Silicon
Features
http://onsemi.com
COLLECTOR
3
2
BASE
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
−60
−60
−5.0
−600
625
5.0
1.5
12
−55
to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
TO−92
CASE 29
STYLE 1
12
1
2
1
EMITTER
•
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPSx
x907x
YWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
DEVICE MARKING
Device
MPS2907AG
MPS2907ARLG
MPS2907ARLRAG
MPS2907ARLRPG
Line 1
MPS
MPS2
MPS
MPS
Line 2
2907A
907A
2907
2907
Y
WW
G
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2010
June, 2010
−
Rev. 5
1
Publication Order Number:
MPS2907A/D
ONSEMI [ ON SEMICONDUCTOR ]
