MPSW45, MPSW45A
MPSW45A is a Preferred Device
One Watt Darlington
Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR 3
BASE
2
Symbol
MPSW45
MPSW45
V
CES
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
Value
40
50
50
60
12
1.0
1.0
8.0
2.5
20
−55 to +150
Unit
Vdc
Vdc
Vdc
Adc
W
mW/°C
W
mW/°C
°C
1
2
3
TO−92 (TO−226)
CASE 29−10
STYLE 1
EMITTER 1
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
MPSW45A
Collector −Base Voltage
MPSW45A
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
125
50
Unit
°C/W
°C/W
MPS
W45x
AYWW
G
G
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
MPSW45x = Device Code
x = 45A Devices
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number:
MPSW45/D
ONSEMI [ ON SEMICONDUCTOR ]
