MSB92ASWT1G,
MSB92AS1WT1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
http://onsemi.com
COLLECTOR
3
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
BASE
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
C
ESD
Value
−300
−300
−5.0
500
HBMu16,000,
MMu2,000
Unit
Vdc
Vdc
Vdc
mAdc
V
1
2
SC−70 (SOT−323)
CASE 419
STYLE 3
3
2
EMITTER
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Electrostatic Discharge
THERMAL CHARACTERISTICS
Rating
Power Dissipation (Note 1)
Junction Temperature
Storage Temperature Range
Symbol
P
D
T
J
T
stg
Max
150
150
−55
to +150
Unit
mW
°C
°C
1
MARKING DIAGRAM
D3 M
G
G
1
MSB92ASWT1G
Dx
M
G
D5 M
G
G
MSB92AS1WT1G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
MSB92ASWT1G
MSB92AS1WT1G
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
September, 2010
−
Rev. 3
1
Publication Order Number:
MSB92ASWT1/D