MUN5211DW1T1G Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1G
series, two BRT devices are housed in the SOT−363 package which is
ideal for low power surface mount applications where board space is
at a premium.
Features
http://onsemi.com
(3)
R
1
Q
1
Q
2
R
2
(4)
R
1
(5)
(6)
(2)
R
2
(1)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
SOT−363
CASE 419B
STYLE 1
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
MARKING DIAGRAM
6
xx M
G
G
1
xx
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Characteristic
(Both Junctions Heated)
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction-to-Ambient
Thermal Resistance,
Junction-to-Lead
Junction and Storage Temperature
Symbol
P
D
Max
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
670 (Note 1)
490 (Note 2)
Max
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
−55
to +150
Unit
mW
mW/°C
°C/W
R
qJA
Symbol
P
D
Unit
mW
mW/°C
°C/W
°C/W
°C
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
R
qJA
R
qJL
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
©
Semiconductor Components Industries, LLC, 2009
October, 2009
−
Rev. 8
1
Publication Order Number:
MUN5211DW1T1/D
ONSEMI [ ON SEMICONDUCTOR ]
