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NBXSBA007LNHTAG 参数 Datasheet PDF下载

NBXSBA007LNHTAG图片预览
型号: NBXSBA007LNHTAG
PDF下载: 下载PDF文件 查看货源
内容描述: 时钟振荡器 [Clock Oscillator]
分类和应用: 振荡器时钟
文件页数/大小: 6 页 / 148 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号NBXSBA007LNHTAG的Datasheet PDF文件第1页浏览型号NBXSBA007LNHTAG的Datasheet PDF文件第2页浏览型号NBXSBA007LNHTAG的Datasheet PDF文件第4页浏览型号NBXSBA007LNHTAG的Datasheet PDF文件第5页浏览型号NBXSBA007LNHTAG的Datasheet PDF文件第6页  
NBXSBA007  
Table 5. DC CHARACTERISTICS (V = 3.3 V 10%, GND = 0 V, T = 40°C to +85°C) (Note 2)  
DD  
A
Symbol  
Characteristic  
Conditions  
Min.  
Typ.  
Max.  
Units  
I
Power Supply Current  
OE Input HIGH Voltage  
OE Input LOW Voltage  
Input HIGH Current  
75  
100  
mA  
DD  
V
2000  
V
DD  
mV  
mV  
mA  
IH  
V
GND 300  
800  
IL  
I
OE  
FSEL  
100  
100  
+100  
+100  
IH  
I
Input LOW Current  
OE  
FSEL  
100  
100  
+100  
+100  
mA  
mV  
mV  
mV  
IL  
V
OH  
Output HIGH Voltage  
Output LOW Voltage  
Output Voltage Amplitude  
V
1195  
DD  
V
945  
DD  
V
V
= 3.3 V  
2105  
2355  
DD  
V
OL  
V
1945  
DD  
V
1600  
DD  
= 3.3 V  
1355  
1700  
DD  
V
680  
OUTPP  
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared  
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit  
values are applied individually under normal operating conditions and not valid simultaneously.  
2. Measurement taken with outputs terminated with 50 W to V 2.0 V. See Figure 4.  
DD  
Table 6. AC CHARACTERISTICS (V = 3.3 V 10%, GND = 0 V, T = 40°C to +85°C) (Note 3)  
DD  
A
Symbol  
Characteristic  
Conditions  
Min.  
Typ.  
Max.  
Units  
MHz  
f
Output Clock Frequency  
Frequency Stability  
240.00  
CLKOUT  
Df  
(Note 4)  
50  
ppm  
F
PhaseNoise Performance  
CLKout  
(See Figure 3)  
100 Hz of Carrier  
1 kHz of Carrier  
10 kHz of Carrier  
100 kHz of Carrier  
1 MHz of Carrier  
10 MHz of Carrier  
12 kHz to 20 MHz  
1000 Cycles  
109  
125  
132  
132  
141  
161  
0.4  
dBc/Hz  
NOISE  
f
= 240.00 MHz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
dBc/Hz  
ps  
t (F)  
jit  
RMS Phase Jitter  
0.9  
8
t
Cycle to Cycle, RMS  
Cycle to Cycle, PeaktoPeak  
Period, RMS  
1.5  
ps  
jitter  
1000 Cycles  
15  
30  
4
ps  
10,000 Cycles  
10,000 Cycles  
1
ps  
Period, PeaktoPeak  
Output Enable/Disable Time  
10  
20  
200  
52  
ps  
t
ns  
OE/OD  
t
Output Clock Duty Cycle  
(Measured at Cross Point)  
48  
50  
%
DUTY_CYCLE  
t
Output Rise Time (20% and 80%)  
Output Fall Time (80% and 20%)  
Startup Time  
250  
250  
1
400  
400  
5
ps  
ps  
R
t
F
t
ms  
start  
st  
Aging  
1
Year  
3
ppm  
ppm  
st  
Every Year After 1  
1
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit  
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared  
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit  
values are applied individually under normal operating conditions and not valid simultaneously.  
3. Measurement taken with outputs terminated with 50 W to V 2.0 V. See Figure 4.  
DD  
4. Parameter guarantee 10 years aging. Includes initial stability at 25°C, shock, vibration, and first year aging.  
http://onsemi.com  
3