NJW3281G (NPN)
NJW1302G (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The NJW3281G and NJW1302G are power transistors for high
power audio, disk head positioners and other linear applications.
Features
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Preferred Devices
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Exceptional Safe Operating Area
NPN/PNP Gain Matching within 10% from 50 mA to 5 A
Excellent Gain Linearity
High BVCEO
High Frequency
These are Pb-Free Devices
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwith
15 AMPERES
COMPLEMENTARY
SILICON POWER TRANSISTORS
250 VOLTS 200 WATTS
MARKING
DIAGRAM
Benefits
NJWxxxG
AYWW
Applications
♦
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High-End Consumer Audio Products
Home Amplifiers
♦
Home Receivers
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Professional Audio Amplifiers
♦
Theater and Stadium Sound Systems
♦
Public Address Systems (PAs)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage - 1.5 V
Collector Current
Collector Current
- Continuous
- Peak (Note 1)
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
Value
250
250
5.0
250
15
30
1.6
200
1.43
- 65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
xxxx
G
A
Y
WW
TO-3P
CASE 340AB
STYLES 1,2,3
= 0281 or 0302
= Pb-Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW3281G
NJW1302G
Package
TO-3P
(Pb-Free)
TO-3P
(Pb-Free)
Shipping
30 Units/Rail
30 Units/Rail
Base Current - Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
qJC
R
qJA
Max
0.625
40
Unit
°C/W
°C/W
Preferred
devices are recommended choices for future use
and best overall value.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%.
©
Semiconductor Components Industries, LLC, 2008
1
January, 2008 - Rev. 0
Publication Order Number:
NJW3281/D
ONSEMI [ ON SEMICONDUCTOR ]
