NJW21193G (PNP)
NJW21194G (NPN)
Preferred Devices
Silicon Power Transistors
The NJW21193G and NJW21194G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
http://onsemi.com
Features
•
Total Harmonic Distortion Characterized
•
High DC Current Gain -
h
FE
= 20 Min @ I
C
= 8 Adc
•
Excellent Gain Linearity
•
High SOA: 2.25 A, 80 V, 1 Second
•
These are Pb-Free Devices
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Voltage - 1.5 V
Collector Current - Continuous
Collector Current
- Peak (Note 1)
Base Current - Continuous
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
V
CEX
I
C
I
B
P
D
T
J
, T
stg
Value
250
400
5.0
400
16
30
5.0
200
1.6
- 65 to
+150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
°C
16 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 200 WATTS
MARKING
DIAGRAM
TO-3P
CASE 340AB
NJW2119xG
AYWW
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
Symbol
R
qJC
R
qJA
Max
0.625
40
Unit
°C/W
°C/W
x
G
A
Y
WW
= 3 or 4
= Pb-Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
NJW21193G
NJW21194G
Package
TO-3P
(Pb-Free)
TO-3P
(Pb-Free)
Shipping
30 Units/Rail
30 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5
ms,
Duty Cycle
≤
10%.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2008
1
January, 2008 - Rev. 0
Publication Order Number:
NJW21193/D
ONSEMI [ ON SEMICONDUCTOR ]
