NSS1C201LT1G
100 V, 3.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (V
CE(sat)
) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
•
This is a Pb−Free Device
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
−
Continuous
Collector Current
−
Peak
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
Max
100
140
7.0
2.0
3.0
Unit
Vdc
Vdc
Vdc
A
A
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
http://onsemi.com
100 VOLTS, 3.0 AMPS
NPN LOW V
CE(sat)
TRANSISTOR
COLLECTOR
3
1
BASE
2
EMITTER
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
D
(Note 1)
Max
490
3.7
R
qJA
(Note 1)
P
D
(Note 2)
255
710
4.3
R
qJA
(Note 2)
T
J
, T
stg
176
−55
to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
VT MG
G
1
VT = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2
, 1 oz. copper traces.
2. FR−4 @ 500 mm
2
, 1 oz. copper traces.
ORDERING INFORMATION
Device
NSS1C201LT1G
Package
SOT−23
(Pb−Free)
Shipping
†
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2008
September, 2008
−
Rev. 0
1
Publication Order Number:
NSS1C201L/D
ONSEMI [ ON SEMICONDUCTOR ]
