欢迎访问ic37.com |
会员登录 免费注册
发布采购

NTD80N02 参数 Datasheet PDF下载

NTD80N02图片预览
型号: NTD80N02
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用:
文件页数/大小: 8 页 / 86 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
 浏览型号NTD80N02的Datasheet PDF文件第2页浏览型号NTD80N02的Datasheet PDF文件第3页浏览型号NTD80N02的Datasheet PDF文件第4页浏览型号NTD80N02的Datasheet PDF文件第5页浏览型号NTD80N02的Datasheet PDF文件第6页浏览型号NTD80N02的Datasheet PDF文件第7页浏览型号NTD80N02的Datasheet PDF文件第8页  
NTD80N02
Power MOSFET
24 V, 80 A, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
http://onsemi.com
V
(BR)DSS
24 V
R
DS(on)
TYP
5.0 mW
I
D
MAX
80 A
Pb−Free Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
Unit
Vdc
Vdc
Adc
4
Watts
°C
mJ
1 2
3
N−Channel
D
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T
C
= 25°C
Drain Current
− Single Pulse (t
p
= 10
ms)
Total Power Dissipation @ T
C
= 25°C
Operating and Storage
Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 24 Vdc, V
GS
= 10 Vdc,
I
L
= 17 Apk, L = 5.0 mH, R
G
= 25
Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
E
AS
Value
24
±20
80*
200
75
−55 to
150
733
S
4
4
1 2
3
12
3
°C/W
R
θJC
R
θJA
R
θJA
T
L
1.65
67
120
260
°C
CASE 369C
CASE 369D
CASE 369AA
DPAK
DPAK
DPAK
(Surface Mount) (Surface Mount) (Straight Lead)
STYLE 2
STYLE 2
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
80
N02
3
Source
1
Gate
2
Drain
3
Source
= Year
= Work Week
= Device Code
Publication Order Number:
NTD80N02/D
4
Drain
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2
).
*Chip current capability limited by package.
1
Gate
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2004
1
December, 2004 − Rev. 4
YWW
80
N02
2
Drain
Y
WW
80N02
ORDERING INFORMATION