NTJD4001N
Small Signal MOSFET
30 V, 250 mA, Dual N−Channel, SC−88
Features
•
•
•
•
•
•
•
•
Low Gate Charge for Fast Switching
Small Footprint − 30% Smaller than TSOP−6
ESD Protected Gate
Pb−Free Package for Green Manufacturing (G Suffix)
http://onsemi.com
V
(BR)DSS
30 V
1.5
W
@ 2.5 V
R
DS(on)
TYP
1.0
W
@ 4.0 V
250 mA
I
D
Max
Applications
Low Side Load Switch
Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
Buck Converters
Level Shifts
SOT−363
SC−88 (6 LEADS)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Steady
State
Steady
State
T
A
= 25
°C
T
A
= 85
°C
T
A
= 25
°C
t =10
µs
P
D
I
DM
T
J
, T
STG
I
S
T
L
Symbol
V
DSS
V
GS
I
D
Value
30
±20
250
180
272
600
−55 to
150
250
260
mW
Units
V
V
mA
S
1
1
6
D
1
G
1
2
5
G
2
D
2
3
4
S
2
Top View
mA
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
1.
°
C
6
MARKING DIAGRAM
mA
°C
1
TED
Surface mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
SC−88 / SOT−363
CASE 419B
STYLE 26
TE
D
= Device Code
= Date Code
PIN ASSIGNMENT
1
Source−1
Gate−1
Drain−2
Top View
6
Drain−1
Gate−2
Source−2
ORDERING INFORMATION
Device
NTJD4001NT1
NTJD4001NT1G
Package
SC−88
SC−88
(Pb−Free)
Shipping
3000 Units/Reel
3000 Units/Reel
©
Semiconductor Components Industries, LLC, 2003
1
August, 2003 − Rev. 0
Publication Order Number:
NTJD4001N/D
ONSEMI [ ON SEMICONDUCTOR ]
