NTMS4503N
Power MOSFET
28 V, 14 A, N−Channel, SO−8
Features
•
Low RDS(on)
•
High Power and Current Handling Capability
•
Low Gate Charge
Applications
V
(BR)DSS
28 V
http://onsemi.com
R
DS(on)
TYP
7.0 mW @ 10 V
8.8 mW @ 4.5 V
I
D
MAX
(Note 1)
14 A
•
•
•
•
DC/DC Converters
Motor Drives
Synchronous Rectifier − POL
Buck Low−Side
D
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
Continuous @ T
a
= 25°C (Note 1)
Continuous @ T
a
= 25°C (Note 2)
Continuous @ T
a
= 25°C (Note 3)
Single Pulse (tp = 10
ms)
Total Power Dissipation
T
A
= 25°C (Note 1)
T
A
= 25°C (Note 2)
T
A
= 25°C (Note 3)
Operating and Storage Temperature
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 30 V, V
GS
= 10 V, I
L
= 12.2 A,
L = 1.0 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
GS
I
D
14
12
9.0
40
W
2.5
1.66
0.93
T
J
, T
stg
E
AS
−55 to
150
75
°C
mJ
8
Value
28
$20
Unit
V
V
A
S
G
I
DM
P
D
MARKING DIAGRAM/
PIN ASSIGNMENT
1
1
8
Drain
Drain
Drain
Drain
4503N
ALYW
SO−8
CASE 751
STYLE 12
4503N
A
L
Y
W
Source
Source
Source
Gate
(Top View)
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
T
L
260
°C
THERMAL RESISTANCE RATINGS
Rating
Thermal Resistance
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Junction−to−Ambient (Note 3)
Symbol
R
qJA
Value
50
75
135
Unit
°C/W
ORDERING INFORMATION
Device
NTMS4503NR2
Package
SO−8
Shipping†
2500/Tape & Reel
1. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in
2
), t < 10 s.
2. Surface−mounted on FR4 board using 1″ pad size (Cu area 1.127 in
2
) steady
state.
3. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area 0.412 in
2
), steady state.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2003
1
November, 2003 − Rev. 0
Publication Order Number:
NTMS4503N/D
ONSEMI [ ON SEMICONDUCTOR ]
