NTP52N10
Power MOSFET
52 Amps, 100 Volts
N−Channel Enhancement Mode TO−220
Features
•
Source−to−Drain Diode Recovery Time comparable to a Discrete
Fast Recovery Diode
•
Avalanche Energy Specified
•
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Typical Applications
http://onsemi.com
•
PWM Motor Controls
•
Power Supplies
•
Converters
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Source Voltage (R
GS
= 1.0 MΩ)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v10
ms)
Drain − Continuous @ T
A
25°C
− Continuous @ T
A
100°C
− Pulsed (Note 1.)
Total Power Dissipation @ T
A
25°C
Derate above 25°C
Operating and Storage Temperature Range
Single Drain−to−Source Avalanche Energy
− Starting T
J
= 25°C
(V
DD
= 50 V, V
GS
= 10 Vdc,
I
L
(pk) = 40 A, L = 1.0 mH, R
G
= 25
Ω)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D
I
D
I
DM
P
D
T
J
, T
stg
E
AS
Value
100
100
"20
"40
52
40
156
178
1.43
−55 to
+150
800
Adc
Unit
Vdc
Vdc
Vdc
52 AMPERES
100 VOLTS
30 mΩ @ V
GS
= 10 V
N−Channel
D
G
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
4
Watts
W/°C
°C
mJ
TO−220AB
CASE 221A
STYLE 5
1
NTP52N10
LLYWW
1
Gate
3
Source
2
Drain
°C/W
R
θJC
R
θJA
T
L
0.7
62.5
260
°C
2
3
NTP52N10
LL
Y
WW
1. Pulse Test: Pulse Width = 10
µs,
Duty Cycle = 2%.
= Device Code
= Location Code
= Year
= Work Week
ORDERING INFORMATION
Device
NTP52N10
Package
TO−220AB
Shipping
50 Units/Rail
©
Semiconductor Components Industries, LLC, 2003
1
December, 2003 − Rev. 2
Publication Order Number:
NTP52N10/D
ONSEMI [ ON SEMICONDUCTOR ]
