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NTR4101PT1G 参数 Datasheet PDF下载

NTR4101PT1G图片预览
型号: NTR4101PT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 沟槽功率MOSFET -20 V,单P沟道, SOT -23 [Trench Power MOSFET −20 V, Single P−Channel, SOT−23]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 6 页 / 60 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTR4101P
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
Leading −20 V Trench for Low R
DS(on)
−1.8 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
Pb−Free Package is Available
V
(BR)DSS
−20 V
http://onsemi.com
Applications
Load/Power Management for Portables
Load/Power Management for Computing
Charging Circuits and Battery Protection
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
10 s
Power Dissipation
(Note 1)
Steady
State
t
10 s
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
ESD Capability (Note 3)
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
tp = 10
ms
C = 100 pF,
RS = 1500
W
P
D
I
DM
ESD
T
J
,
T
STG
I
S
T
L
I
D
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
P
D
Symbol
V
DSS
V
GS
I
D
Value
−20
±8.0
−2.4
−1.7
−3.2
0.73
1.25
−1.8
−1.3
0.42
−7.5
225
−55 to
150
−2.4
260
W
A
V
°C
A
°C
A
W
Unit
V
V
A
R
DS(ON)
TYP
70 mW @ −4.5 V
90 mW @ −2.5 V
112 mW @ −1.8 V
I
D
MAX
−3.2 A
P−Channel MOSFET
S
G
D
MARKING DIAGRAM &
PIN ASSIGNMENT
3
3
Drain
TR4
W
1
Gate
TR4
W
= Device Code
= Work Week
2
Source
1
2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
SOT−23
CASE 318
STYLE 21
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
Device
NTR4101PT1
NTR4101PT1G
Package
SOT−23
SOT−23
Pb−Free
Shipping
3000/Tape & Reel
3000/Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t < 10 s (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJA
R
qJA
R
qJA
Max
170
100
300
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Unit
°C/W
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0
©
Semiconductor Components Industries, LLC, 2004
1
October, 2004 − Rev. 3
Publication Order Number:
NTR4101P/D