MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by PZTA92T1/D
High Voltage Transistor
PNP Silicon
COLLECTOR 2,4
BASE
1
EMITTER 3
PZTA92T1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
Total Power Dissipation up to TA = 25°C(1)
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
– 300
–300
– 5.0
– 500
1.5
– 65 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
°C
°C
SOT–223 PACKAGE
PNP SILICON
HIGH VOLTAGE TRANSISTOR
SURFACE MOUNT
4
1
2
3
CASE 318E–04, STYLE 1
TO–261AA
DEVICE MARKING
P2D
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance from Junction to Ambient(1)
Symbol
R
θJA
Max
83.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage (IC = –100
µAdc,
IE = 0)
Emitter–Base Breakdown Voltage (IE = –100
µAdc,
IC = 0)
Collector–Base Cutoff Current (VCB = – 200 Vdc, IE = 0)
Emitter–Base Cutoff Current (VBE = – 3.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
– 300
– 300
– 5.0
—
—
—
—
—
– 0.25
– 0.1
Vdc
Vdc
Vdc
µAdc
µAdc
ON CHARACTERISTICS
DC Current Gain(2)
(IC = – 1.0 mAdc, VCE = – 10 Vdc)
(IC = –10 mAdc, VCE = – 10 Vdc)
(IC = – 30 mAdc, VCE = – 10 Vdc)
Saturation Voltages
(IC = –20 mAdc, IB = –2.0 mAdc)
(IC = –20 mAdc, IB = –2.0 mAdc)
hFE
25
40
25
VCE(sat)
VBE(sat)
—
—
—
—
—
Vdc
– 0.5
– 0.9
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance @ f = 1.0 MHz (VCB = –20 Vdc, IE = 0)
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = – 20 Vdc, f = 100 MHz)
Ccb
fT
—
50
6.0
—
pF
MHz
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in2.
2. Pulse Test: Pulse Width
≤
300
µs;
Duty Cycle = 2.0%.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 3
©
Motorola, Inc. 1998
Motorola Small–Signal Transistors, FETs and Diodes Device Data
1
ONSEMI [ ON SEMICONDUCTOR ]
