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UMA4NT1 参数 Datasheet PDF下载

UMA4NT1图片预览
型号: UMA4NT1
PDF下载: 下载PDF文件 查看货源
内容描述: 双共发射极偏置电阻晶体管 [Dual Common Emitter Bias Resistor Transistors]
分类和应用: 晶体小信号双极晶体管开关光电二极管
文件页数/大小: 5 页 / 60 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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UMA4NT1, UMA6NT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CB
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0, I
C
= 5.0 mA)
ON CHARACTERISTICS
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
Collector−Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
UMA4NT1
UMA6NT1
UMA4NT1
UMA6NT1
V
(BR)CBO
V
(BR)CEO
h
FE
V
CE(SAT)
V
OL
V
OH
R1
50
50
160
160
4.9
7.0
33
250
250
10
47
0.25
0.2
13
61
Vdc
Vdc
Vdc
kW
Vdc
Vdc
UMA4NT1
UMA6NT1
I
CBO
I
CEO
I
EBO
100
500
0.9
0.2
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
PD , POWER DISSIPATION (MILLIWATTS)
250
200
150
100
50
R
qJA
= 833°C/W
0
−50
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
http://onsemi.com
2