RED
1.
2.
2.1
2.2
Item No.: 105207
This specification applies to GaAsP / GaAs LED Chips
Structure
Planar structure
Electrodes
p-side (anode)
n-side (cathode)
Al
Au alloy
3.
Outlines (dimensions in microns)
p-Diffusion
p-Electrode
1210
Isolator
n-Epitaxy GaAsP
300
n-Substrate GaAs
n-Electrode
1010
4.
Electrical and optical characteristics (T=25°C)
Parameter
Symbol
Conditions
min
5
150
typ
1,65
200
660
max
1,84
Unit
V
V
cd
nm
Forward voltage
V
F
I
F
= 7 mA
Reverse voltage
V
R
I
R
= 10 A
Luminous intensity
I
V
I
F
= 7 mA
Peak wavelength
I
F
= 7 mA
λ
P
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with wire bond side on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
