RED
1.
2.
2.1
2.2
Item No.: 114230
This specification applies to GaAlAs / GaAs LED Chips
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
p-Epitaxy GaAlAs
Active Layer
n-Epitaxy GaAlAs
270
n-Substrate GaAs
265
n-Electrode
265
120
Wire bond contacts can also be circular or square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
Luminous intensity *
Symbol
V
F
I
R
I
V
Conditions
I
F
= 20 mA
V
R
= 5 V
min
typ
1,85
max
2,10
10
Unit
V
µA
mcd
nm
I
F
= 20 mA
I
F
= 10 mA
Peak wavelength
I
F
= 20 mA
λ
P
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
9
4
12
6
650
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
