RED
1.
2.
2.1
2.2
Item No.: 115160
This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed)
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
n-Electrode
n-Epitaxy GaAlAs
265
120
150
Active Layer
p-Epitaxy GaAlAs
p-Electrode
265
Wire bond contacts can also be circular or square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
Luminous intensity *
Switching time
Symbol
V
F
I
R
I
V
t
R
t
f
Conditions
I
F
= 20 mA
V
R
= 5 V
I
F
= 20 mA
I
F
= 20 mA
min
typ
1,90
max
2,30
10
Unit
V
µA
mcd
ns
nm
12
Peak wavelength
I
F
= 20 mA
λ
P
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
16
50
35
655
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OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
