INFRA-RED
1.
2.
2.1
2.2
Item No.: 120214
This specification applies to GaAs / GaAs LED Chips
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
p-Epitaxy GaAs
365
120
230
n-Epitaxy GaAs
n-substrate GaAs
n-Electrode
365
Wire bond contacts can also have a spider shape
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
output Power *
Switching time
Symbol
V
F
I
R
Φ
e
t
r
, t
f
Conditions
I
F
=
V
R
=
20 mA
5V
min
typ
1,20
max
1,40
10
Unit
V
µA
mW
µs
nm
I
F
= 20 mA
I
F
= 50 mA
I
F
= 100 mA
0,6
1,5
0,8
2,0
0,6
Peak wavelength
I
F
= 20 mA
930
λ
P
* On request, wafers will be delivered according to output power classes
Power measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
Φ
e
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
