INFRA-RED
1.
2.
2.1
2.2
Item No.: 128244
This specification applies to GaAlAs / GaAlAs Chips (substrate removed)
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
p-Epitaxy GaAlAs
365
120
160
typ.
Active Layer
n-Epitaxy GaAlAs
n-Electrode
365
Wire bond contacts can also be square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse voltage
output Power *
Symbol
V
F
V
R
Φ
e
Conditions
I
F
= 20 mA
I
R
= 10
µA
min
5
2,6
6,5
typ
1,25
3,0
7,5
300
920
max
1,50
Unit
V
V
mW
ns
nm
I
F
= 20 mA
I
F
= 50 mA
Switching time
t
r
, t
f
I
F
= 20 mA
Peak wavelength
λ
P
I
F
= 20 mA
Power measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
Φ
e
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
