INFRA-RED
1.
2.
2.1
2.2
Item No.: 136274
This specification applies to GaAlAs / GaAlAs Chips (substrate removed)
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
p-Epitaxy GaAlAs
365
120
180
typ.
Active Layer
n-Epitaxy GaAlAs
n-Electrode
365
Wire bond contact can also be square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse voltage
output Power *
�½
λ
P
Symbol
V
F
V
R
Φ
e
Conditions
I
F
= 20 mA
I
R
= 10
µA
I
F
= 20 mA
I
F
= 20 mA
min
5
3,8
typ
1,35
4,5
42
20
850
max
1,60
Unit
V
V
mW
nm
ns
nm
Switching time
t
r
, t
f
I
F
= 20 mA
Peak wavelength
I
F
= 20 mA
λ
Power measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
Φ
e
typ
min
max
Quantity
© 2004
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OSA [ OSA OPTO LIGHT GMBH ]
