YELLOW-GREEN
1.
2.
2.1
2.2
Item No.: 160210
This specification applies to GaP / GaP LED Chips
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
p-Epitaxy GaP
265
120
270
n-Epitaxy GaP
n-Epitaxy GaP
n-Substrate GaP
265
n-Electrode
Wire bond contacts can also be circular or square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
I
V
Conditions
I
F
= 20 mA
V
R
= 5 V
min
typ
2,25
max
2,50
10
Unit
V
µA
mcd
nm
Luminous intensity *
Peak wavelength
* On request, wafers will
Brightness measurement
5.
Packing
I
F
= 20 mA
2,0
4,5
I
F
= 20 mA
568
λ
P
be delivered according to luminous intensity classes
at OSA on gold plate
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
