YELLOW
1.
2.
2.1
2.2
Item No.: 170622
This specification applies to GaAsP / GaP LED Chips
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
p-Epitaxy GaP
n-Epitaxy GaP
250
235
n-Electrode
n-Epitaxy GaP
n-Substrate GaP
235
110
Wire bond contacts can also be square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
Luminous intensity *
Symbol
V
F
I
R
I
V
Conditions
I
F
= 2 mA
V
R
= 5 V
I
F
= 2 mA
min
typ
1,85
max
2,05
10
Unit
V
µA
cd
nm
180
300
dom. wavelength
λ
D
I
F
= 2 mA
590
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
