TSN-RED
1.
2.
2.1
2.2
Item No.: 192220
This specification applies to GaAsP / GaP LED Chips
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
3.
Outlines (dimensions in microns)
p-Electrode
p-Diffusion
265
120
270
n-Epitaxy GaAsP
n-Epitaxy GaAsP
n-Substrate GaP
265
n-Electrode
Wire bond contacts can also be circular or square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 20 mA
V
R
= 5 V
min
typ
2,05
max
2,50
10
Unit
V
µA
mcd
nm
Luminous intensity *
I
V
I
F
= 20 mA
3,0
4,0
Peak wavelength
I
F
= 20 mA
650
λ
P
* On request, wafers will be delivered according to luminous intensity classes
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
