RED
1.
2.
2.1
2.2
Item No.: 194170
This specification applies to AlInGaP / GaAs LED Chips
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy or Al
Au alloy
3.
Outlines (dimensions in microns)
n-Electrode
Epitaxy AlInGaP
265
120
250
p-Substrate GaAs
265
p-Electrode
Chip thickness could also be 180 m or 210 m
Wire-bond contacts can also be square
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
= 20 mA
V
R
= 5 V
min
typ
1,90
20
655
max
2,30
10
Unit
V
µA
mcd
nm
Luminous intensity *
I
V
I
F
= 20 mA
Peak wavelength
I
F
= 20 mA
λ
p
Brightness measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire-bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
I
V
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com
OSA [ OSA OPTO LIGHT GMBH ]
