PKN0107
P-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
VGS=0V , ID=-250uA
Min.
-100
---
Typ.
---
Max.
---
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△BVDSS/△TJ
Reference to 25℃ , ID=-1mA
VGS=-10V , ID=-0.8A
-0.0624
0.52
0.56
-1.5
4.5
---
---
V/℃
---
0.65
0.7
-2.5
---
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V , ID=-0.4A
---
VGS(th)
Gate Threshold Voltage
-1.0
---
V
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
mV/℃
VDS=-80V , VGS=0V , TJ=25℃
VDS=-80V , VGS=0V , TJ=55℃
---
10
IDSS
Drain-Source Leakage Current
uA
---
---
100
±100
---
VGS=±20V , VDS=0V
IGSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
---
---
nA
S
VDS=-5V , ID=-0.8A
---
3
Rg
VDS=0V , VGS=0V , f=1MHz
---
16
32
Qg
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
---
4.5
1.14
1.5
13.6
6.8
34
---
VDS=-15V , VGS=-4.5V , ID=-0.5A
nC
ns
Qgs
Qgd
Td(on)
Tr
---
---
---
---
---
---
VDD=-50V , VGS=-10V , RG=3.3
---
---
ID=-0.5A
Td(off)
Tf
Turn-Off Delay Time
Fall Time
---
---
---
3
---
Ciss
Coss
Crss
Input Capacitance
---
553
29
---
VDS=-15V , VGS=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
---
---
---
20
---
Diode Characteristics
Symbol
Parameter
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
Min.
---
Typ.
---
Max.
-0.9
-1.8
-1.2
Unit
A
IS
Continuous Source Current1,4
Pulsed Source Current2,4
Diode Forward Voltage2
ISM
VSD
---
---
A
---
---
V
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
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