Transistor
2SA683, 2SA684
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
5.9±0.2
Unit: mm
4.9±0.2
q
q
Complementary pair with 2SC1383 and 2SC1384.
Allowing supply with the radial taping.
(Ta=25˚C)
Ratings
–30
–60
–25
–50
–5
–1.5
–1
1
150
–55 ~ +150
Unit
V
2.54±0.15
+0.3
+0.2
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SA683
2SA684
2SA683
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
emitter voltage 2SA684
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
0.45
–0.1
0.45
–0.1
1.27
+0.2
V
A
A
W
˚C
˚C
1.27
13.5±0.5
0.7
–0.2
0.7±0.1
8.6±0.2
s
Features
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
(Ta=25˚C)
Symbol
I
CBO
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –500mA
V
CE
= –5V, I
C
= –1A
I
C
= –500mA, I
B
= –50mA
I
C
= –500mA, I
B
= –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–30
–60
–25
–50
–5
85
50
– 0.2
– 0.85
200
20
30
– 0.4
–1.2
V
V
MHz
pF
340
min
typ
max
– 0.1
Unit
µA
V
2SA683
2SA684
2SA683
2SA684
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
V
V
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
