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2SA720 参数 Datasheet PDF下载

2SA720图片预览
型号: 2SA720
PDF下载: 下载PDF文件 查看货源
内容描述: 对于低频功率放大和驱动放大互补 [For low-frequency power amplification and driver amplification Complementary]
分类和应用: 驱动
文件页数/大小: 4 页 / 82 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SA720的Datasheet PDF文件第2页浏览型号2SA720的Datasheet PDF文件第3页浏览型号2SA720的Datasheet PDF文件第4页  
Transistors
2SA0719, 2SA0720
(2SA719, 2SA720)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317, 2SC1318
Features
Complementary pair with 2SC1317 and 2SC1318
0.7
±0.1
5.0
±0.2
Unit: mm
4.0
±0.2
Parameter
Collector-base voltage
(Emitter open)
2SA0719
2SA0720
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−30
−60
−25
−50
−5
−500
−1
625
150
−55
to
+150
Unit
V
0.45
+0.15
–0.1
12.9
±0.5
0.45
+0.15
–0.1
2.5
+0.6
–0.2
1
2 3
2.5
+0.6
–0.2
Absolute Maximum Ratings
T
a
=
25°C
Collector-emitter voltage 2SA0719
(Base open)
2SA0720
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
0.7
±0.2
5.1
±0.2
mA
A
mW
°C
°C
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
2SA0719
2SA0720
2SA0719
2SA0720
V
EBO
I
CBO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −10
V, I
C
= −500
mA
I
C
= −300
mA, I
B
= −30
mA
I
C
= −300
mA, I
B
= −30
mA
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
85
40
0.35
0.60
−1.1
200
6
15
−1.5
V
CEO
I
C
= −10
mA, I
B
=
0
Symbol
V
CBO
Conditions
I
C
= −10 µA,
I
E
=
0
Min
−30
−60
−25
−50
−5
0.1
340
V
µA
V
V
MHz
pF
V
Typ
Max
Unit
V
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Note) The part numbers in the parenthesis show conventional part number.
Publication date: January 2003
SJC00002CED
2.3
±0.2
V
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
1