Transistor
2SA719, 2SA720
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1317 and 2SC1318
5.0±0.2
Unit: mm
4.0±0.2
q
Complementary pair with 2SC1317 and 2SC1318.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SA719
2SA720
2SA719
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
(Ta=25˚C)
Ratings
–30
–60
–25
–50
–5
–1
–500
625
150
–55 ~ +150
Unit
V
13.5±0.5
5.1±0.2
s
Features
0.45
–0.1
1.27
+0.2
0.45
–0.1
1.27
+0.2
emitter voltage 2SA720
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
A
mA
mW
˚C
˚C
2.54±0.15
1 2 3
2.3±0.2
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
(Ta=25˚C)
Symbol
I
CBO
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –10mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –10V, I
C
= –500mA
I
C
= –300mA, I
B
= –30mA
I
C
= –300mA, I
B
= –30mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–30
–60
–25
–50
–5
85
40
– 0.35
–1.1
200
6
15
– 0.6
–1.5
V
V
MHz
pF
340
min
typ
max
– 0.1
Unit
µA
V
2SA719
2SA720
2SA719
2SA720
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
V
V
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
