Transistors
2SC1317, 2SC1318
Silicon NPN epitaxial planer type
Unit: mm
For low-frequency power amplification and driver amplification
Complementary to 2SA719 and 2SA720
I
Features
•
Low collector to emitter saturation voltage V
CE(sat)
•
Complementary pair with 2SA719 and 2SA720
0.7
±0.1
5.0
±0.2
4.0
±0.2
0.7
±0.2
13.5
±0.5
I
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector to
base voltage
Collector to
emitter voltage
2SC1317
2SC1318
2SC1317
2SC1318
V
EBO
I
CP
I
C
P
C
T
j
T
stg
V
CEO
Symbol
V
CBO
Rating
30
60
25
50
7
1
500
625
150
−55
to
+150
V
A
mA
mW
°C
°C
V
123
2.54
±0.15
Unit
V
5.1
±0.2
0.45
+0.15
–0.1
(1.27)
(1.27)
2.3
±0.2
0.45
+0.15
–0.1
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1: Emitter
2: Collector
3: Base
TO-92 Package
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector cutoff current
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Forward current transfer ratio
*1
Collector to emitter saturation voltage
*1
Base to emitter saturation voltage
*1
Transition frequency
Collector output capacitance
Note) *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
2SC1317
2SC1318
2SC1317
2SC1318
V
EBO
h
FE1 *2
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
I
E
=
10
µA,
I
C
=
0
V
CE
=
10 V, I
C
=
150 mA
V
CE
=
10 V, I
C
=
500 mA
I
C
=
300 mA, I
B
=
30 mA
I
C
=
300 mA, I
B
=
30 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
10 V, I
E
= 0,
f
=
1 MHz
V
CEO
I
C
=
10 mA, I
B
=
0
Symbol
I
CBO
V
CBO
Conditions
V
CB
=
20 V, I
E
=
0
I
C
=
10
µA,
I
E
=
0
30
60
25
50
7
85
40
0.35
1.1
200
6
15
0.6
1.5
V
V
MHz
pF
340
V
V
Min
Typ
Max
0.1
Unit
µA
V
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
