Transistor
2SB1073
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
s
Features
q
q
q
4.5±0.1
1.6±0.2
1.5±0.1
1.0
–0.2
+0.1
Low collector to emitter saturation voltage V
CE(sat)
.
Large peak collector current I
CP
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
2.6±0.1
0.4max.
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
4.0
–0.20
0.4±0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25˚C)
Ratings
–30
–20
–7
–7
–4
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
I
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –30V, I
E
= 0
V
EB
= –7V, I
C
= 0
I
C
= –10µA, I
E
= 0
I
C
= –1mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –2V, I
C
= –2A
*2
I
C
= –3A, I
B
= –0.1A
*2
V
CB
= –6V, I
E
= 50mA, f = 200MHz
V
CB
= –20V, I
E
= 0, f = 1MHz
–30
–20
–7
120
– 0.6
120
40
*2
min
typ
max
–100
–100
Unit
nA
nA
V
V
V
315
–1
V
MHz
pF
Pulse measurement
*1
h
FE
Rank classification
Rank
h
FE
Q
120 ~ 205
IQ
R
180 ~ 315
IR
Marking Symbol
2.5±0.1
+0.25
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
