Transistor
2SB1218A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1819A
2.1±0.1
Unit: mm
s
Features
q
q
0.425
1.25±0.1
0.425
High foward current transfer ratio h
FE
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
0.9±0.1
–45
–45
–7
–200
–100
150
150
–55 ~ +150
V
V
V
mA
mA
mW
˚C
˚C
0.7±0.1
Ratings
Unit
0 to 0.1
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S-Mini Type Package
Marking symbol :
B
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= –20V, I
E
= 0
V
CE
= –10V, I
B
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –2mA
I
C
= –100mA, I
B
= –10mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–45
–45
–7
160
– 0.3
80
2.7
460
– 0.5
V
MHz
pF
min
typ
max
–0.1
–100
Unit
µA
µA
V
V
V
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
Q
160 ~ 260
BQ
R
210 ~ 340
BR
S
290 ~ 460
BS
0.15
–0.05
+0.1
0.3
–0
+0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
