Transistors
2SB1462J
Silicon PNP epitaxial planar type
1.60
+0.05
–0.03
0.80
±0.05
Unit: mm
0.12
+0.03
–0.01
For general amplification
Complementary to 2SD2216J
■
Features
•
High forward current transfer ratio h
FE
•
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
1.00
±0.05
3
1.60
±0.05
0.85
+0.05
–0.03
1
0.27
±0.02
2
(0.50)(0.50)
0 to 0.02
(0.80)
5˚
■
Absolute Maximum Ratings
T
a
=
25°C
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
−60
−50
−7
−100
−200
125
125
−55
to
+125
V
V
V
mA
mA
mW
°C
°C
0.10 max.
Parameter
Symbol
Rating
Unit
0.70
+0.05
–0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: A
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −100 µA,
I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −20
V, I
E
=
0
V
CE
= −10
V, I
E
=
0
V
CE
= −10
V, I
C
= −2
mA
I
C
= −100
mA, I
B
= −10
mA
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−60
−50
−7
Typ
Max
5˚
Unit
V
V
V
−
0.1
−100
180
−
0.3
80
2.7
390
−
0.5
MHz
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
(0.375)
µA
µA
V
Publication date: January 2003
SJC00087BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
