Transistors
2SB1699
Silicon PNP epitaxial planar type
Unit: mm
For power amplification
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
4.5
±0.1
1.6
±0.2
1.5
±0.1
4.0
+0.25
–0.20
2.5
±0.1
3˚
0.4
±0.04
0.4
±0.08
1.5
±0.1
3˚
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−60
−60
−6
−2
−4
1
150
−55
to
+150
Unit
V
V
V
A
A
W
°C
°C
3.0
±0.15
45˚
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Marking Symbol: 3A
Note) *: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
*
Symbol
V
CEO
I
CBO
I
CEO
h
FE1
h
FE2
h
FE3
Collector-emitter saturation voltage
*
Turn-on time
Storage time
Fall time
Transition frequency
V
CE(sat)
t
on
t
stg
t
f
f
T
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
Conditions
I
C
= −1
mA, I
B
=
0
V
CB
= −60
V, I
E
=
0
V
CE
= −60
V, I
B
=
0
V
CE
= −4
V, I
C
= −1
A
V
CE
= −4
V, I
C
= −
0.2 A
V
CE
= −4
V, I
C
= −2
A
I
C
= −2
A, I
B
= −250
mA
I
C
= −1
A, I
B1
=
0.1 A
I
B2
= −
0.1 A, V
CC
= −50
V
0.2
0.4
0.1
180
80
60
30
−
0.5
V
µs
µs
µs
MHz
Min
−60
−100
−100
250
Typ
Max
Unit
V
µA
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
0.4 max.
2.6
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
1.0
+0.1
–0.2
1
3
2
0.5
±0.08
Publication date: April 2004
SJC00304AED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
