Power Transistors
2SB940, 2B940A
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
0.7±0.1
Unit: mm
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
φ3.1±0.1
1.4±0.1
1.3±0.2
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
4.2±0.2
Complementary to 2SD1264 and 2SD1264A
q
q
16.7±0.3
14.0±0.5
q
High collector to emitter voltage V
CEO
Large collector power dissipation P
C
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
–200
–200
–150
–180
–6
–3
–2
30
2
150
–55 to +150
Unit
V
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB940
2SB940A
2SB940
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
emitter voltage 2SB940A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
V
V
A
A
W
˚C
˚C
Solder Dip
4.0
7.5±0.2
s
Features
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter
voltage
2SB940
2SB940A
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= –200V, I
E
= 0
V
EB
= –4V, I
C
= 0
I
C
= –50µA, I
E
= 0
I
C
= –5mA, I
B
= 0
I
E
= –500µA, I
C
= 0
V
CE
= –10V, I
C
= –150mA
V
CE
= –10V, I
C
= –400mA
V
CE
= –10V, I
C
= –400mA
I
C
= –500mA, I
B
= –50mA
V
CE
= –10V, I
C
= – 0.5A, f = 10MHz
30
–200
–150
–180
–6
60
50
–1
–1
V
V
MHz
240
min
typ
max
–50
–50
Unit
µA
µA
V
V
V
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
*
h
FE1
Rank classification
Q
60 to 140
P
100 to 240
Rank
h
FE1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
