2SB949 参数 Datasheet PDF下载

Power Transistors

2SB0949

(2SB949)

, 2SB0949A

(2SB949A)

Silicon PNP epitaxial planar type darlington

4.2

±0.2

Unit: mm

0.7

±0.1

10.0

±0.2

5.5

±0.2

4.2

±0.2

2.7

±0.2

For power amplification and switching

Complementary to 2SD1275 and 2SD1275A

•

High forward current transfer ratio h

FE

•

High-speed switching

•

Full-pack package which can be installed to the heat sink with one screw

16.7

±0.3

7.5

±0.2

■

Features

φ

3.1

±0.1

Solder Dip

(4.0)

14.0

±0.5

■

Absolute Maximum Ratings

T

a

=

25°C

Parameter

Collector-base voltage

(Emitter open)

2SB0949

2SB0949A

V

CEO

V

EBO

I

C

I

CP

T

C

=

25°C

P

C

T

j

T

stg

Symbol

V

CBO

Rating

−60

−80

−60

−80

−5

−2

−4

35

2

150

−55

to

+150

°C

°C

V

A

A

W

V

Unit

V

1.4

±0.1

1.3

±0.2

0.5

+0.2

–0.1

0.8

±0.1

2.54

±0.3

5.08

±0.5

Collector-emitter voltage 2SB0949

(Base open)

2SB0949A

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power

dissipation

Junction temperature

Storage temperature

1 2 3

1: Base

2: Collector

3: Emitter

EIAJ: SC-67

TO-220F-A1 Package

Internal Connection

C

B

■

Electrical Characteristics

T

a

=

25°C

±

3°C

Parameter

Collector-emitter voltage

(Base open)

Base-emitter voltage

Collector-base cutoff

current (Emitter open)

Collector-emitter cutoff

current (Base open)

2SB0949

2SB0949A

2SB0949

2SB0949A

I

EBO

h

FE1

h

FE2 *

Collector-emitter saturation voltage

Transition frequency

Turn-on time

Storage time

Fall time

V

CE(sat)

f

T

t

on

t

stg

t

f

I

CEO

2SB0949

2SB0949A

V

BE

I

CBO

V

CE

= −4

V, I

C

= −2

A

V

CB

= −60

V, I

E

=

0

V

CB

= −80

V, I

E

=

0

V

CE

= −30

V, I

B

=

0

V

CE

= −40

V, I

B

=

0

V

EB

= −5

V, I

C

=

0

V

CE

= −4

V, I

C

= −1

A

V

CE

= −4

V, I

C

= −2

A

I

C

= −2

A, I

B

= −8

mA

V

CE

= −10

V, I

C

= −

0.5 A, f

=

1 MHz

I

C

= −2

A, I

B1

= −8

mA, I

B2

=

8 mA

V

CC

= −50

V

20

0.4

1.5

0.5

1 000

1 000

Symbol

V

CEO

Conditions

I

C

= −30

mA, I

B

=

0

Min

−60

−80

Typ

E

Max

Unit

V

−2.8

−1

−1

−2

−2

−2

10 000

−2.5

V

MHz

µs

µs

µs

mA



mA

V

mA

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Rank classification

Rank

h

FE2

R

1 000 to 2 500

Q

P

2 000 to 5 000 4 000 to 10 000

Note) The part numbers in the parenthesis show conventional part number.

Publication date: April 2003

SJD00028BED

1