Power Transistors
2SB0950
(2SB950)
, 2SB0950A
(2SB950A)
Silicon PNP epitaxial planar type darlington
Unit: mm
0.7
±0.1
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
■
Features
•
High forward current transfer ratio h
FE
•
High-speed switching
•
Full-pack package which can be installed to the heat sink with one screw
16.7
±0.3
10.0
±0.2
5.5
±0.2
4.2
±0.2
2.7
±0.2
7.5
±0.2
φ
3.1
±0.1
Parameter
Collector-base voltage
(Emitter open)
2SB0950
2SB0950A
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
a
=
25°C
T
j
T
stg
Rating
−60
−80
−60
−80
−5
−4
−8
40
2
150
−55
to
+150
Unit
V
Solder Dip
(4.0)
■
Absolute Maximum Ratings
T
C
=
25°C
14.0
±0.5
4.2
±0.2
1.4
±0.1
1.3
±0.2
0.5
+0.2
–0.1
0.8
±0.1
2.54
±0.3
Collector-emitter voltage 2SB0950
(Base open)
2SB0950A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
V
5.08
±0.5
V
A
A
W
B
°C
°C
1 2 3
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
Collector-emitter cutoff
current (Base open)
2SB0950
2SB0950A
2SB0950
2SB0950A
I
EBO
h
FE1
h
FE2 *
Collector-emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
Transition frequency
Turn-on time
Storage time
Fall time
f
T
t
on
t
stg
t
f
I
CEO
2SB0950
2SB0950A
V
BE
I
CBO
V
CE
= −3
V, I
C
= −3
A
V
CB
= −60
V, I
E
=
0
V
CB
= −80
V, I
E
=
0
V
CE
= −30
V, I
B
=
0
V
CE
= −40
V, I
B
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −3
V, I
C
= −
0.5 A
V
CE
= −3
V, I
C
= −3
A
I
C
= −3
A, I
B
= −12
mA
I
C
= −5
A, I
B
= −20
mA
V
CE
= −10
V, I
C
= −
0.5 A, f
=
1 MHz
I
C
= −3
A, I
B1
= −12
mA, I
B2
=
12 mA
V
CC
= −50
V
20
0.3
2
0.5
1 000
1 000
Symbol
V
CEO
Conditions
I
C
= −30
mA, I
B
=
0
Min
−60
−80
Typ
E
Max
Unit
V
−2.5
−200
−200
−500
−500
−2
10 000
−2
−4
V
V
MHz
µs
µs
µs
mA
µA
V
µA
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE2
R
1 000 to 2 500
Q
P
Note) The part numbers in the parenthesis show conventional part number.
Publication date: April 2003
c
2 000 to 5 000 4 000 to 10 000
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
