Power Transistors
2SC2258
Silicon NPN triple diffusion planar type
For high breakdown voltage general amplification
■
Features
•
High collector-emitter voltage (Base open) V
CEO
•
High transition frequency f
T
•
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
φ
3.16
±0.1
8.0
+0.5
–0.1
Unit: mm
3.2
±0.2
3.8
±0.3
11.0
±0.5
1.9
±0.1
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
250
250
7
100
150
1.2
*1
4
*2
Junction temperature
Storage temperature
150
−55
to
+150
°C
°C
Unit
V
V
V
mA
mA
W
1
2
0.75
±0.1
4.6
±0.2
0.5
±0.1
0.5
±0.1
2.3
±0.2
3
1.76
±0.1
Note) *1: Without heat sink
*2 :With a 100
×
100
×
2 mm Al heat sink
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-emitter cutoff current
(Resistor between B and E)
Forward current transfer ratio
Symbol
V
EBO
V
BE
I
CER
h
FE1
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
I
E
=
0.1 mA, I
C
=
0
V
CE
=
20 V, I
C
=
40 mA
V
CE
=
250 V, R
BE
=
100 kΩ
V
CE
=
20 V, I
C
=
40 mA
V
CE
=
50 V, I
C
=
5 mA
I
C
=
50 mA, I
B
=
5 mA
V
CB
=
10 V, I
E
= −10
mA, f
=
200 MHz
V
CB
=
50 V, I
E
=
0, f
=
1 MHz
100
3.0
4.5
40
30
1.2
V
MHz
pF
Min
7
1.2
100
Typ
Max
Unit
V
V
µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
16.0
±1.0
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3.05
±0.1
Publication date: January 2003
SJD00098BED
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
