Transistors
2SC2480
Silicon NPN epitaxial planer type
Unit: mm
For high-frequency amplification / oscillation / mixing
0.40
+0.10
–0.05
3
0.16
+0.10
–0.06
1.50
+0.25
–0.05
2.8
+0.2
–0.3
I
Features
•
High transition frequency f
T
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10°
1.1
+0.2
–0.1
(0.65)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
30
20
3
50
150
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
1: Base
2: Emitter
3: Collector
0 to 0.1
I
Absolute Maximum Ratings
T
a
=
25°C
1.1
+0.3
–0.1
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package
Marking Symbol: R
I
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Transition frequency
*
Common emitter reverse transfer
capacitance
Power gain
Note) *: Rank classification
Rank
f
T
(MHz)
Marking symbol
T
S
No-rank
Symbol
V
CBO
V
EBO
h
FE
V
BE
f
T
C
re
C
rb
PG
Conditions
I
C
=
100
µA,
I
E
=
0
I
E
=
10
µA,
I
C
=
0
V
CB
=
10 V, I
E
= −2
mA
V
CB
=
10 V, I
E
= −2
mA
V
CB
=
10 V, I
E
= −15
mA, f
=
200 MHz
V
CB
=
10 V, I
E
= −1
mA, f
=
10.7 MHz
V
CE
=
6 V, I
C
=
0, f
=
1 MHz
V
CB
=
10 V, I
E
= −1
mA, f
=
200 MHz
800
Min
30
3
25
720
1 300
1
0.8
20
1 600
1.5
250
mV
MHz
pF
pF
dB
Typ
Max
Unit
V
V
800 to 1 400 1 000 to 1 600 800 to 1 600
RT
RS
R
Product of no-rank is not classified and have no indication for rank.
0.4
±0.2
5°
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
