Power Transistors
2SC3063
Silicon NPN triple diffusion planar type
Unit: mm
For TV video output amplification
φ
3.16
±0.1
8.0
+0.5
–0.1
3.2
±0.2
1.9
±0.1
I
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Rating
300
300
7
200
100
1.2
150
−55
to
+150
Unit
V
V
V
mA
mA
W
°C
°C
1
2
0.75
±0.1
4.6
±0.2
0.5
±0.1
0.5
±0.1
2.3
±0.2
3
1.76
±0.1
16.0
±1.0
•
High collector to emitter voltage V
CEO
•
Small collector output capacitance C
ob
•
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
3.8
±0.3
11.0
±0.5
I
Features
1 : Emitter
2 : Collector
3 : Base
TO-126B-A1 Package
I
Electrical Characteristics
T
C
=
25°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
BE
V
CE(sat)
f
T
C
ob
Conditions
I
C
= 10
µA,
I
E
= 0
I
C
= 0.1 mA, I
B
= 0
I
E
= 10
µA,
I
C
= 0
V
CE
= 50 V, I
C
= 5 mA
V
CE
= 10 V, I
C
= 30 mA
I
C
= 30 mA, I
B
= 3 mA
V
CB
= 30 V, I
E
=
−20
mA, f = 200 MHz
V
CB
= 30 V, I
E
= 0, f = 1 MHz
70
140
2.4
Min
300
300
7
50
250
1.2
1.5
V
V
MHz
pF
Typ
Max
Unit
V
V
V
3.05
±0.1
193
PANASONIC [ PANASONIC SEMICONDUCTOR ]
