Power Transistors
2SC3795, 2SC3795A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s
Features
q
q
q
q
Parameter
Collector to
base voltage
Collector to
2SC3795
2SC3795A
2SC3795
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
Ratings
800
900
800
900
500
8
10
5
3
40
2
150
–55 to +150
Unit
V
16.7±0.3
s
Absolute Maximum Ratings
(T
C
=25˚C)
7.5±0.2
φ3.1±0.1
4.2±0.2
High-speed switching
High collector to base voltage V
CBO
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
Unit: mm
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
4.0
1.4±0.1
1.3±0.2
Solder Dip
emitter voltage 2SC3795A
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
14.0±0.5
V
V
V
A
A
A
W
˚C
˚C
0.5
+0.2
–0.1
0.8±0.1
2.54±0.25
5.08±0.5
1
2
3
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
V
CEO(sus)
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO(sus)*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 800V, I
E
= 0
V
CB
= 900V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 0.2A, L = 25mH
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
8
1
I
C
= 3A, I
B1
= 0.6A, I
B2
= – 0.6A,
V
CC
= 200V
1.2
3
1
1.2
X
L 25mH
min
typ
max
100
100
100
Unit
µA
µA
V
2SC3795
2SC3795A
500
15
8
1
1.5
V
V
MHz
µs
µs
µs
2SC3795
2SC3795A
t
on
t
stg
2SC3795
2SC3795A
t
f
Test circuit
50/60Hz
mercury relay
120Ω
6V
1Ω
15V
Y
G
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
