Transistor
2SC3934
Silicon NPN epitaxial planer type
For high-frequency wide-band low-noise amplification
Unit: mm
2.1±0.1
s
Features
q
q
0.425
1.25±0.1
0.425
High transition frequency f
T
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0±0.2
1.3±0.1
0.65
3
2
0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25˚C)
0.9±0.1
15
12
2.5
50
30
150
150
–55 ~ +150
V
V
V
mA
mA
mW
˚C
˚C
0.7±0.1
Ratings
Unit
0 to 0.1
0.2±0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC–70
S–Mini Type Package
Marking symbol :
1U
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Transition frequency
Collector output capacitance
Foward transfer gain
Maximum unilateral power gain
Noise figure
(Ta=25˚C)
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
| S
21e
|
2
GUM
NF
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 2V, I
C
= 0
V
CE
= 10V, I
C
= 10mA
V
CE
= 10V, I
C
= 10mA, f = 800MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 20mA, f = 800MHz
V
CE
= 10V, I
C
= 20mA, f = 800MHz
V
CE
= 10V, I
C
= 5mA, f = 800MHz
9
12
12
14
1.3
2.5
40
4.5
1.2
GHz
pF
dB
dB
dB
min
typ
max
100
1
Unit
µA
µA
0.15
–0.05
+0.1
0.3
–0
+0.1
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
