Power Transistors
2SC3974
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
q
q
q
q
q
16.2±0.5
12.5
3.5
Solder Dip
High-speed switching
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
800
800
500
500
15
7
4
80
3
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
0.7
s
Features
15.0±0.3
11.0±0.2
5.0±0.2
3.2
21.0±0.5
15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1
1.1±0.1
5.45±0.3
10.9±0.5
1
2
3
0.6±0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 800V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 4A
I
C
= 4A, I
B
= 0.8A
I
C
= 4A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 4A, I
B1
= 0.8A, I
B2
= –1.6A,
V
CC
= 200V
20
1.0
3.0
0.3
500
15
8
1.0
1.5
V
V
MHz
µs
µs
µs
min
typ
max
100
100
Unit
µA
µA
V
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
