Power Transistors
2SD1499
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1063
0.7±0.1
10.0±0.2
5.5±0.2
2.7±0.2
4.2±0.2
Unit: mm
4.2±0.2
s
Features
q
q
q
q
Extremely satisfactory linearity of the forward current transfer
ratio h
FE
Wide area of safe operation (ASO)
High transition frequency f
T
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25˚C)
Ratings
100
100
5
8
5
40
2
150
–55 to +155
Unit
V
V
V
A
A
W
˚C
˚C
7.5±0.2
16.7±0.3
φ3.1±0.1
4.0
1.4±0.1
1.3±0.2
14.0±0.5
Solder Dip
0.5
+0.2
–0.1
0.8±0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
(T
C
=25˚C)
Symbol
I
CBO
I
EBO
h
FE1
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 20mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 3A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.3A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
V
CB
= 10V, f = 1MHz
20
90
20
60
20
1.8
2.0
V
V
MHz
pF
200
min
typ
max
50
50
Unit
µA
µA
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE2
Rank classification
Q
60 to 120
P
100 to 200
Rank
h
FE2
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
