Transistor
2SD2413
Silicon NPN triple diffusion planer type
For low-frequency output amplification
Unit: mm
s
q
q
q
q
q
Features
High collector to base voltage V
CBO
.
High collector to emitter voltage V
CEO
.
Large collector power dissipation P
C
.
Low collector to emitter saturation voltage V
CE(sat)
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
2.6±0.1
4.5±0.1
1.6±0.2
1.5±0.1
0.4max.
45°
1.0
–0.2
+0.1
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
3
2
1
4.0
–0.20
0.4±0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25˚C)
Ratings
400
400
5
200
100
1
150
–55 ~ +150
Unit
V
V
V
mA
mA
W
˚C
˚C
1:Base
2:Collector
3:Emitter
marking
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
1S
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25˚C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 100µA, I
E
= 0
I
C
= 500µA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CE
= 5V, I
C
= 30mA
I
C
= 50mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 30V, I
E
= –20mA, f = 200MHz
V
CB
= 30V, I
E
= 0, f = 1MHz
40
7
min
400
400
5
30
1.5
1.5
V
V
MHz
pF
typ
max
Unit
V
V
V
2.5±0.1
+0.25
1
PANASONIC [ PANASONIC SEMICONDUCTOR ]
