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2SD2441 参数 Datasheet PDF下载

2SD2441图片预览
型号: 2SD2441
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅外延平面型(对于低频输出放大) [Silicon NPN epitaxial planer type(For low-frequency output amplification)]
分类和应用:
文件页数/大小: 2 页 / 39 K
品牌: PANASONIC [ PANASONIC SEMICONDUCTOR ]
 浏览型号2SD2441的Datasheet PDF文件第2页  
Transistor
2SD2441
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
s
Features
q
4.5±0.1
1.6±0.2
1.5±0.1
0.4max.
45°
1.0
–0.2
+0.1
0.4±0.08
4.0
–0.20
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
0.5±0.08
1.5±0.1
0.4±0.04
(Ta=25˚C)
Ratings
10
10
7
2
1.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
1:Base
2:Collector
3:Emitter
3
3.0±0.15
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
EIAJ:SC–62
Mini Power Type Package
Marking symbol :
1V
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Forward voltage
*1
Applicable
(Ta=25˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
V
F*1
Conditions
V
CB
= 7V, I
E
= 0
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 1V, I
C
= 400mA
*2
I
C
= 1A, I
B
= 25mA
*2
V
CB
= 60V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
I
F
= 500mA
*2
min
typ
max
1
Unit
µA
V
V
V
10
10
7
200
0.17
190
50
1.3
700
0.25
MHz
pF
V
to the built-in diode.
Pulse measurement
2.5±0.1
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
2.6±0.1
+0.25
V
1