Transistor
P
C
— Ta
240
–120
Ta=25˚C
200
–100
–50
2SB709A
I
C
— V
CE
–60
V
CE
=–5V
Ta=25˚C
I
C
— I
B
Collector power dissipation P
C
(mW)
Collector current I
C
(mA)
160
–80
I
B
=–300µA
–60
–250µA
–200µA
–40
–150µA
–100µA
–20
–50µA
Collector current I
C
(mA)
–40
120
–30
80
–20
40
–10
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
0
0
–150
–300
–450
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(
µA
)
I
B
— V
BE
–400
V
CE
=–5V
Ta=25˚C
–350
–200
–240
I
C
— V
BE
Collector to emitter saturation voltage V
CE(sat)
(V)
–10
–3
–1
V
CE
=–5V
25˚C
Ta=75˚C
–25˚C
V
CE(sat)
— I
C
I
C
/I
B
=10
Base current I
B
(
µA
)
–300
–250
–200
–150
–100
–50
0
0
– 0.6
–1.2
–1.8
Collector current I
C
(mA)
–160
– 0.3
25˚C
– 0.1
Ta=75˚C
–120
–25˚C
–80
– 0.03
– 0.01
–40
– 0.003
– 0.001
–1
0
0
– 0.4
– 0.8
–1.2
–1.6
–2.0
–3
–10
–30
–100 –300 –1000
Base to emitter voltage V
BE
(V)
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA)
h
FE
— I
C
600
V
CE
=–10V
160
140
120
100
80
60
40
20
0
–1
0
0.1
V
CB
=–10V
Ta=25˚C
f
T
— I
E
8
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
I
E
=0
f=1MHz
Ta=25˚C
Forward current transfer ratio h
FE
500
Transition frequency f
T
(MHz)
7
6
5
4
3
2
1
0
–1
400
Ta=75˚C
300
25˚C
–25˚C
200
100
–3
–10
–30
–100 –300 –1000
0.3
1
3
10
30
100
–3
–10
–30
–100
Collector current I
C
(mA)
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
