Silicon Junction FETs (Small Signal)
P
D
Ta
240
8
Ta=25˚C
7
200
8.0
2SK198
I
D
V
DS
9.6
V
DS
=10V
I
D
V
GS
Allowable power dissipation P
D
(mW)
Drain current I
D
(mA)
160
V
GS
=0V
5
4
– 0.1V
3
2
1
– 0.2V
– 0.3V
– 0.4V
Drain current I
D
(mA)
6
6.4
120
4.8
80
3.2
Ta=75˚C
1.6
25˚C
–25˚C
40
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0
–1.0
– 0.8
– 0.6
– 0.4
– 0.2
0
Ambient temperature Ta (˚C)
Drain to source voltage V
DS
(V)
Gate to source voltage V
GS
(V)
g
m
V
GS
20
V
DS
=10V
Ta=25˚C
20
g
m
I
D
10
C
iss
, C
oss
V
DS
Input capacitance (Common source),
Output capacitance (Common source) C
iss
,C
oss
(pF)
V
DS
=10V
Ta=25˚C
f=1MHz
V
GS
=–3V
Ta=25˚C
8
Mutual conductance g
m
(mS)
16
Mutual conductance g
m
(mS)
I
DSS
=5.0mA
16
12
12
2.0mA
8
6
C
iss
8
I
DSS
=5.0mA
4
4
2.0mA
0
– 0.8
4
2
C
oss
0
– 0.6
– 0.4
– 0.2
0
0
1
2
3
4
5
6
7
8
0
1
3
10
30
100
Gate to source voltage V
GS
(V)
Drain current I
D
(mA)
Drain to source voltage V
DS
(V)
C
rss
V
DS
Reverse transfer capacitance (Common source) C
rss
(pF)
5
V
GS
=–3V
f=1MHz
Ta=25˚C
4
12
NF
f
V
DS
=10V
I
D
=5.2mA
Ta=25˚C
10
Noise figure NF (dB)
8
3
6
R
g
=500Ω
2
4
1
2
1kΩ
0
1
3
10
30
100
0
1
10
10
2
10
3
10
5
Drain to source voltage V
DS
(V)
Frequency f (Hz)
2
PANASONIC [ PANASONIC SEMICONDUCTOR ]
