Power F-MOS FETs
C
iss
, C
oss
, C
rss
V
DS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) C
iss
,C
oss
,C
rss
(pF)
10000
f=1MHz
T
C
=25˚C
2SK3045
V
DS
, V
GS
Q
g
400
16
14
250V
12
10
8
V
GS
6
4
2
V
DS
0
24
150
t
d(on)
, t
r
, t
f
, t
d(off)
I
D
V
DD
=150V
V
GS
=10V
T
C
=25˚C
Drain to source voltage V
DS
(V)
V
DS
=150V
Gate to source voltage V
GS
(V)
350
300
250
200
150
100
50
0
0
4
8
Switching time t
d(on)
,t
r
,t
f
,t
d(off)
(ns)
125
1000
C
iss
100
100
t
d(off)
75
C
oss
10
C
rss
50
t
f
t
r
t
d(on)
25
1
0
50
100
150
200
250
0
0
0.5
1.0
1.5
2.0
2.5
3.0
12
16
20
Drain to source voltage V
DS
(V)
Gate charge amount Q
g
(nC)
Drain current I
D
(A)
R
th(t)
t
10
2
(1) Without heat sink
(2) With a 100
×
100
×
2mm Al heat sink
(1)
Thermal resistance R
th
(t) (˚C/W)
10
(2)
1
10
–1
10
–2
10
–4
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t (s)
3
PANASONIC [ PANASONIC SEMICONDUCTOR ]
